View BF1216_7811040.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1. product profile 1.1 general description the BF1216 is a combination of two dual gate mosfet amplifiers with shared source and gate2 leads. the source and substrate are interconnected. in ternal bias circuits enable dc stabilization and very good cross modulation performance during agc. integrated diodes between the gates and source protect against excessive input voltage surges. the transistor is available as a sot363 micro-miniature plastic package. 1.2 features and benefits ? two low noise gain controlled amplifiers in a single package; both with a partly integrated bias ? superior cross modulation performance during agc ? high forward transfer admittance ? high forward transfer admittance to input capacitance ratio 1.3 applications ? gain controlled low noise amp lifiers for vhf and uhf applications running on a 5 v supply voltage ? digital and analog television tuners ? professional communication equipment BF1216 dual n-channel dual gate mosfet rev. 01 ? 29 april 2010 product data sheet caution this device is sensitive to electrostatic di scharge (esd). therefore care should be taken during transport and handling.
BF1216_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 29 april 2010 2 of 17 nxp semiconductors BF1216 dual n-channel dual gate mosfet 1.4 quick reference data [1] t sp is the temperature at the soldering point of the source lead. [2] calculated from s-parameters. [3] measured in figure 17 test circuit. 2. pinning information 3. ordering information table 1. quick reference data for amplifier a and b symbol parameter conditions min typ max unit v ds drain-source voltage dc - - 6 v i d drain current dc - - 30 ma p tot total power dissipation t sp 107 c [1] --180mw | y fs | forward transfer admittance f = 100 mhz; t j =25 c; i d =18ma 23 27 38 ms c iss(g1) input capacitance at gate1 f = 100 mhz [2] -2.5- pf c rss reverse transfer capacitance f = 100 mhz [2] -25- ff nf noise figure f = 400 mhz; y s =y s(opt) -1.0- db f=800mhz; y s =y s(opt) -1.5- db xmod cross modulation input level for k = 1 % at 40 db agc; f w =50mhz; f unw =60mhz [3] 105 107 - db v t j junction temperature - - 150 c table 2. discrete pinning pin description simplified outline graphic symbol 1 gate1 (amplifier a) 2gate2 3 gate1 (amplifier b) 4 drain (amplifier b) 5source 6 drain (amplifier a) 13 2 4 5 6 sym11 9 amp a da s db g1a g2 g1b amp b table 3. ordering information type number package name description version BF1216 - plastic surface-mounted package; 6 leads sot363
BF1216_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 29 april 2010 3 of 17 nxp semiconductors BF1216 dual n-channel dual gate mosfet 4. marking 5. limiting values [1] t sp is the temperature at the soldering point of the source lead. table 4. marking type number marking description BF1216 m5p made in hong kong m5t made in malaysia m5w made in china table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit per mosfet v ds drain-source voltage - 6 v i d drain current dc - 30 ma i g1 gate1 current - 10 ma i g2 gate2 current - 10 ma p tot total power dissipation t sp 107 c [1] -180mw t stg storage temperature ? 65 +150 c t j junction temperature - 150 c fig 1. power derating curve t sp (?c) 0 200 150 50 100 001aac193 100 150 50 200 250 p tot (mw) 0
BF1216_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 29 april 2010 4 of 17 nxp semiconductors BF1216 dual n-channel dual gate mosfet 6. thermal characteristics 7. static characteristics [1] r g1 connects gate1 to v gg = 5 v; see figure 17 . table 6. thermal characteristics symbol parameter conditions typ unit r th(j-sp) thermal resistance from junction to solder point 240 k/w table 7. static characteristics t j =25 c. symbol parameter conditions min typ max unit per mosfet; unless otherwise specified v (br)dss drain-source breakdown voltage v g1-s =v g2-s =0v; i d =10 a amplifier a 6 - - v amplifier b 6 - - v v (br)g1-ss gate1-source breakdown voltage v g2-s =v ds =0v; i g1-s =10ma 6 - 10 v v (br)g2-ss gate2-source breakdown voltage v g1-s =v ds =0v; i g2-s =10ma 6 - 10 v v f(s-g1) forward source-gate1 voltage v g2-s =v ds =0v; i s-g1 =10ma 0.5 - 1.5 v v f(s-g2) forward source-gate2 voltage v g1-s =v ds =0v; i s-g2 =10ma 0.5 - 1.5 v v g1-s(th) gate1-source threshold voltage v ds =5v; v g2-s =4v; i d =100 a0.3-1.0v v g2-s(th) gate2-source threshold voltage v ds =5v; v g1-s =5v; i d =100 a0.4-1.0v i ds drain-source current v g2-s =4v [1] amplifier a; v ds(a) =5v; r g1(a) =39k --24ma amplifier b; v ds(b) =5v; r g1(b) =39k --24ma i g1-s gate1 cut-off current v g2-s =0v; v ds(a) =v ds(b) =0v amplifier a; v g1-s(a) =5v - - 50 na amplifier b; v g1-s(b) =5v - - 50 na i g2-s gate2 cut-off current v g2-s =4v; v ds(a) =v ds(b) =0v; v g1-s(a) =v g1-s(b) =0v --20na
BF1216_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 29 april 2010 5 of 17 nxp semiconductors BF1216 dual n-channel dual gate mosfet 8. dynamic characteristics [1] calculated from s-parameters. [2] measured in figure 17 test circuit. table 8. dynamic characteristics for amplifier a and b common source; t amb =25 c; v g2-s =4v; v ds =5v; i d =19ma. symbol parameter conditions min typ max unit | y fs | forward transfer admittance f = 100 mhz; t j =25 c; i d =18ma 23 27 38 ms c iss(g1) input capacitance at gate1 f = 100 mhz [1] -2.5- pf c iss(g2) input capacitance at gate2 f = 100 mhz [1] -2.4- pf c oss output capacitance f = 100 mhz [1] -0.8- pf c rss reverse transfer capacitance f = 100 mhz [1] -25- ff g tr transducer power gain amplifier a; b s =b s(opt) ; b l =b l(opt) [1] f=200mhz; g s =2ms; g l =0.5ms - 34 - db f=400mhz; g s =2ms; g l =1ms - 30 - db f=800mhz; g s = 3.3 ms; g l =1ms - 26 - db amplifier b; b s =b s(opt) ; b l =b l(opt) [1] f=200mhz; g s =2ms; g l =0.5ms - 34 - db f=400mhz; g s =2ms; g l =1ms - 30 - db f=800mhz; g s = 3.3 ms; g l =1ms - 26 - db nf noise figure f = 11 mhz; g s =20ms; b s =0 s - - 5 db f=400mhz; y s =y s(opt) -1.0- db f=800mhz; y s =y s(opt) -1.5- db xmod cross modulation input level for k = 1 % at 40 db agc; f w =50mhz; f unw =60mhz [2] at 0 db agc 90 104 - db v at 10 db agc - 100 - db v at 20 db agc - 104 - db v at 40 db agc 105 107 - db v
BF1216_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 29 april 2010 6 of 17 nxp semiconductors BF1216 dual n-channel dual gate mosfet 8.1 graphs for amplifiers a and b (1) v g2-s =4.0v. (2) v g2-s =3.5v. (3) v g2-s =3.0v. (4) v g2-s =2.5v. (5) v g2-s =2.0v. (6) v g2-s =1.5v. (7) v g2-s =1.0v. v ds =5v; t j =25 c. (1) v g1-s =2.1v. (2) v g1-s =2.0v. (3) v g1-s =1.9v. (4) v g1-s =1.8v. (5) v g1-s =1.7v. (6) v g1-s =1.6v. (7) v g1-s =1.5v. (8) v g1-s =1.4v. (9) v g1-s =1.3v. (10) v g1-s =1.2v. (11) v g1-s =1.1v. (12) v g1-s =1.0v. v g2-s =4v; t j =25 c. fig 2. transfer characteristics; typical values f ig 3. output characteristics; typical values v g1-s (v) 0 2.5 2.0 1.0 1.5 0.5 001aal584 10 20 30 i d (ma) 0 (1) (2) (3) (4) (5) (6) (7) v ds (v) 06 4 2 001aal585 10 20 30 i d (ma) 0 (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) (12)
BF1216_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 29 april 2010 7 of 17 nxp semiconductors BF1216 dual n-channel dual gate mosfet (1) v g2-s =4.0v. (2) v g2-s =3.5v. (3) v g2-s =3.0v. (4) v g2-s =2.5v. (5) v g2-s =2.0v. (6) v g2-s =1.5v. (7) v g2-s =1.0v. v ds =5v; t j =25 c. (1) v g2-s =4.0v. (2) v g2-s =3.5v. (3) v g2-s =3.0v. (4) v g2-s =2.5v. (5) v g2-s =2.0v. (6) v g2-s =1.5v. (7) v g2-s =1.0v. v ds =5v; t j =25 c. fig 4. gate1 current as a function of gate1 voltage; typical values fig 5. forward transfer admittance as a function of drain current; typical values v ds =5v; v g2-s =4v; t j =25 c. v ds =5v; v g2-s =4v; r g1 =39k ; t j =25 c. fig 6. drain current as a function of gate1 current; typical values fig 7. drain current as a function of gate1 supply voltage (v gg ); typical values v g1-s (v) 0 2.0 1.5 0.5 1.0 001aal586 40 60 20 80 100 i g1 ( a) 0 (1) (2) (3) (4) (5) (6) (7) i d (ma) 025 20 10 15 5 001aal587 10 20 30 |y fs | (ms) 0 (1) (2) (7) (3) (4) (5) (6) 001aal588 i g1 ( a) 060 40 20 8 4 12 16 i d (ma) 0 v gg (v) 05 4 23 1 001aal589 10 5 15 20 i d (ma) 0
BF1216_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 29 april 2010 8 of 17 nxp semiconductors BF1216 dual n-channel dual gate mosfet (1) r g1 =10k . (2) r g1 =20k . (3) r g1 =40k . (4) r g1 =60k . (5) r g1 =80k . v g2-s =4v; t j =25 c. (1) v gg =5.0v. (2) v gg =4.5v. (3) v gg =4.0v. (4) v gg =3.5v. (5) v gg =3.0v. t j =25 c; r g1 =39k (connected to v gg ). fig 8. drain current as a function of v ds and v gg ; typical values fig 9. drain current as a function of gate2 voltage; typical values v gg = g ds (v) 05 4 23 1 001aal590 10 20 30 i d (ma) 0 (4) (5) (1) (2) (3) v g2-s (v) 05 4 23 1 001aal591 20 10 30 40 i d (ma) 0 (1) (2) (3) (4) (5)
BF1216_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 29 april 2010 9 of 17 nxp semiconductors BF1216 dual n-channel dual gate mosfet v ds =5v; v gg = 5 v; nominal i d =19ma; r g1 =39k ; f=50mhz; t j =25 c; see figure 17 . v ds =5v; v gg = 5 v; nominal v g2-s =4v; r g1 =39k ; f w =50mhz; f unw = 60 mhz; nominal i d =19ma; t j =25 c; see figure 17 . fig 10. typical gain reduction as a function of the agc voltage; typical values fig 11. unwanted voltage for 1 % cross modulation as a function of gain reduction; typical values v ds =5v; v gg = 5 v; nominal v g2-s =4v; r g1 =39k ; f w = 50 mhz; nominal i d =19ma; t j =25 c; see figure 17 . fig 12. typical drain current as a function of gain reduction; typical values v agc (v) 04 3 12 001aal592 30 20 40 10 0 gain reduction (db) 50 gain reduction (db) 050 40 20 30 10 001aal593 100 90 110 120 xmod (db v) 80 gain reduction (db) 050 40 20 30 10 001aal594 20 10 30 40 i d (ma) 0
BF1216_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 29 april 2010 10 of 17 nxp semiconductors BF1216 dual n-channel dual gate mosfet v ds(a) =5v; v g2-s =4v; v ds(b) =0v; i d(a) =19ma; and vice versa. v ds(a) =5v; v g2-s =4v; v ds(b) =0v; i d(a) =19ma; and vice versa. fig 13. input admittance as a function of frequency; typical values fig 14. forward transfer admittance and phase as a function of frequency; typical values v ds(a) =5v; v g2-s =4v; v ds(b) =0v; i d(a) =19ma; and vice versa. v ds(a) =5v; v g2-s =4v; v ds(b) =0v; i d(a) =19ma; and vice versa. fig 15. reverse transfer admittance and phase as a function of frequency; typical values fig 16. output admittance as a function of frequency; typical values 001aal595 f (mhz) 10 10 3 10 2 10 ? 1 1 10 10 2 g is , b is (ms) 10 ? 2 g is b is f (mhz) 10 10 3 10 2 001aal596 10 10 2 |y fs | (ms) 1 ? 10 ? 10 2 ? fs (deg) ? 1 |y fs | ? fs 001aal597 10 2 10 10 3 |y rs | (ms) 1 ? 10 2 ? 10 ? 10 3 ? rs (deg) ? 1 f (mhz) 10 10 3 10 2 |y rs | ? rs 001aal598 1 10 ? 1 10 b os , g os (ms) 10 ? 2 f (mhz) 10 10 3 10 2 b os g os
BF1216_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 29 april 2010 11 of 17 nxp semiconductors BF1216 dual n-channel dual gate mosfet 8.2 scattering parameters for amplifiers a and b 8.3 noise data for amplifiers a and b table 9. scattering paramete rs for amplifiers a and b v ds(a) =5v; v g2-s =4v; i d(a) =19ma; v ds(b) =0v;v g1-s(b) =0v; t amb =25 c; z 0 = 50 ; typical values. f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) 40 0.9910 ? 4.73 2.76 175.80 0.00074 99.46 0.9946 ? 1.29 100 0.9888 ? 9.07 2.75 171.94 0.00150 86.12 0.9941 ? 2.65 200 0.9853 ? 18.19 2.73 163.86 0.00292 79.56 0.9929 ? 5.31 300 0.9762 ? 27.09 2.69 155.90 0.00420 74.12 0.9916 ? 7.92 400 0.9656 ? 35.80 2.65 148.17 0.00540 69.71 0.9900 ? 10.49 500 0.9502 ? 44.45 2.59 140.50 0.00634 65.32 0.9882 ? 13.05 600 0.9331 ? 52.89 2.52 132.96 0.00709 61.01 0.9855 ? 15.66 700 0.9155 ? 61.08 2.45 125.69 0.00751 57.66 0.9830 ? 18.24 800 0.8966 ? 69.01 2.38 118.59 0.00782 54.58 0.9810 ? 20.75 900 0.8755 ? 76.72 2.30 111.71 0.00792 52.37 0.9798 ? 23.19 1000 0.8550 ? 84.10 2.22 105.07 0.00783 50.60 0.9785 ? 25.68 table 10. noise data for amplifiers a and b v ds(a) =5v; v g2-s =4v; i d(a) =19ma, t amb =25 c; typical values. f (mhz) nf min (db) opt r n (ratio) (ratio) (degree) 400 1.0 0.788 28.9 0.903 800 1.5 0.673 58.8 0.725
BF1216_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 29 april 2010 12 of 17 nxp semiconductors BF1216 dual n-channel dual gate mosfet 9. test information fig 17. cross modulation test setup for one mosfet 001aad92 6 r1 10 k r l 50 l1 2.2 h r gen 50 v i r2 50 r g1 c1 4.7 nf c2 4.7 nf c3 4.7 nf c4 4.7 nf v agc v gg dut v ds
BF1216_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 29 april 2010 13 of 17 nxp semiconductors BF1216 dual n-channel dual gate mosfet 10. package outline fig 18. package outline sot363 references outline version european projection issue date iec jedec jeita sot363 sc-88 wb m b p d e 1 e pin 1 index a a 1 l p q detail x h e e v m a a b y 0 1 2 mm scale c x 13 2 4 5 6 plastic surface-mounted package; 6 leads sot36 3 unit a 1 max b p cd e e 1 h e l p qy w v mm 0.1 0.30 0.20 2.2 1.8 0.25 0.10 1.35 1.15 0.65 e 1.3 2.2 2.0 0.2 0.1 0.2 dimensions (mm are the original dimensions) 0.45 0.15 0.25 0.15 a 1.1 0.8 04-11-08 06-03-16
BF1216_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 29 april 2010 14 of 17 nxp semiconductors BF1216 dual n-channel dual gate mosfet 11. abbreviations 12. revision history table 11. abbreviations acronym description agc automatic gain control mosfet metal-oxide semiconductor field-effect transistor uhf ultra high frequency vhf very high frequency table 12. revision history document id release date data sheet status change notice supersedes BF1216_1 20100429 product data sheet - -
BF1216_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 29 april 2010 15 of 17 nxp semiconductors BF1216 dual n-channel dual gate mosfet 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 13.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 13.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interrupt ion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer?s third party customer(s) (hereinafter both referred to as ?application?). it is customer?s sole responsibility to check whether the nxp semiconductors product is suitable and fit for the application planned. customer has to do all necessary testing for the application in order to avoid a default of the application and the product. nxp semiconducto rs does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicond uctors product is au tomotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this docu ment contains the product specification.
BF1216_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 29 april 2010 16 of 17 nxp semiconductors BF1216 dual n-channel dual gate mosfet in the event that customer uses t he product for design-in and use in automotive applications to automotive s pecifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully in demnifies nxp semi conductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. 13.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 14. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors BF1216 dual n-channel dual gate mosfet ? nxp b.v. 2010. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 29 april 2010 document identifier: BF1216_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 15. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 static characteristics. . . . . . . . . . . . . . . . . . . . . 4 8 dynamic characteristics . . . . . . . . . . . . . . . . . . 5 8.1 graphs for amplifiers a and b . . . . . . . . . . . . . 6 8.2 scattering parameters for amplifiers a and b . 11 8.3 noise data for amplifiers a and b . . . . . . . . . . 11 9 test information . . . . . . . . . . . . . . . . . . . . . . . . 12 10 package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 11 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 14 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 15 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 13.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 13.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16 14 contact information. . . . . . . . . . . . . . . . . . . . . 16 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

▲Up To Search▲

Price & Availability of BF1216

	To Download BF1216 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .